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this is information on a product in full production. july 2014 docid025028 rev 3 1/13 STL4P2UH7 p-channel 20 v, 0.087 typ., 4 a stripfet? vii deepgate? power mosfet in a powerflat? 2x2 package datasheet - production data figure 1. internal schematic diagram features ? ultra logic level ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device exhibits low on-state resistance and capacitance for improved conduction and switching performance. note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. 1(d) 2(d) 3(g) 6(d) 5(d) 4(s) d s am11269v1 powerflat? 2x2 1 2 3 6 5 4 1 2 3 order code v ds r ds(on) max i d STL4P2UH7 20 v 0.1 @ 4.5 v 4 a table 1. device summary order code marking package packaging STL4P2UH7 4l2u powerflat? 2x2 tape and reel www.st.com
contents STL4P2UH7 2/13 docid025028 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid025028 rev 3 3/13 STL4P2UH7 electrical ratings 13 1 electrical ratings note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d (1) 1. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 4 a i d (1) drain current (continuous) at t pcb = 100 c 2.5 a i dm (1)(2) 2. pulse width limited by safe operating area drain current (pulsed) 16 a p tot (1) total dissipation at t pcb = 25 c 2.4 w t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on 1inch 2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max, single operation 52 c/w
electrical characteristics STL4P2UH7 4/13 docid025028 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 20 v i dss zero gate voltage drain current v gs = 0, v ds = 20 v 1 a i gss gate-body leakage current v ds = 0, v gs = 8 v 10 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.4 1 v r ds(on) static drain-source on- resistance v gs = 4.5 v, i d = 2 a 0.087 0.1 ? v gs = 2.5 v, i d = 2 a 0.11 0.13 ? v gs = 1.8 v, i d = 2 a 0.145 0.18 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 10 v, f = 1 mhz - 510 - pf c oss output capacitance - 66 - pf c rss reverse transfer capacitance -44-pf q g total gate charge v dd = 10 v, i d = 3 a, v gs = 4.5 v (see figure 14 ) -4.8-nc q gs gate-source charge - 0.7 - nc q gd gate-drain charge - 0.8 - nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 10 v, i d = 1.5 a, r g = 4.7 ? , v gs = 4.5 v (see figure 15 ) -9-ns t r rise time - 21 - ns t d(off) turn-off delay time - 40 - ns t f fall time - 19 - ns
docid025028 rev 3 5/13 STL4P2UH7 electrical characteristics 13 for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 16 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1 a, v gs = 0 - 1 v t rr reverse recovery time v dd = 16 v di/dt = 100 a/s, i sd = 1 a t j =150 c (see figure 15 ) -12.8 ns q rr reverse recovery charge - 5 nc i rrm reverse recovery current - 0.8 a
electrical characteristics STL4P2UH7 6/13 docid025028 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv pv ?v 7m ?& 7sfe ?& 6lqjohsxovh *,3*6$ 6lqjohsxovh g . w s v qdc *,3*6$ , ' 9 '6 9 $ 9 *6 9 9 9 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$ 9 *6 4 j q& 9 9 '' 9 , ' $ *,3*6$ 5 '6rq , ' $ p 9 *6 9 *,3*6$
docid025028 rev 3 7/13 STL4P2UH7 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 5 '6rq 7 - ?& qrup , ' $ 9 *6 9 *,3*6$ 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
test circuits STL4P2UH7 8/13 docid025028 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times
docid025028 rev 3 9/13 STL4P2UH7 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL4P2UH7 10/13 docid025028 rev 3 figure 16. drawing dimension powerflat? 2 x 2 8368575_rev_c
docid025028 rev 3 11/13 STL4P2UH7 package mechanical data 13 figure 17. powerflat? 2 x 2 footprint table 8. powerflat? 2 x 2 mechanical data dim. mm. min. typ. max. a 0.70 0.75 0.80 a1 0.00 0.02 0.05 a3 0.20 b 0.25 0.30 0.35 d 1.90 2.00 2.10 e 1.90 2.00 2.10 d2 0.90 1.00 1.10 e2 0.80 0.90 1.00 e 0.55 0.65 0.75 k 0.15 0.25 0.35 k1 0.20 0.30 0.40 k2 0.25 0.35 0.45 l 0.20 0.25 0.30 l1 0.65 0.75 0.85 footprint
revision history STL4P2UH7 12/13 docid025028 rev 3 5 revision history table 9. document revision history date revision changes 22-jul-2013 1 first release. 30-may-2014 2 ? document status promoted from target to production data ? modified: title ? modified: r ds(on) typical and maximum values in table 4 ? modified: v ds , v dd , i d and typical values in table 5 and 6 ? modified: typical values in table 7 ? added: section 2.1: electrical characteristics (curves) ? minor text changes 16-jul-2014 3 ? modified: v ds value in table 2 ? minor text changes
docid025028 rev 3 13/13 STL4P2UH7 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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